2N7002A-7 vs 2N7002,215

Esta comparação detalhada entre 2N7002A-7 e 2N7002,215 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002A-7 is a viable functional replacement candidate for the 2N7002,215 in most low-power switching applications, with both devices sharing identical N-channel MOSFET topology, SOT-23 footprint, and comparable voltage ratings. Designers should validate gate threshold spread and thermal derating margins before committing to volume production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002A-7

Diodes Incorporated

Lifecycle
Active
Stock
1569 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002A-7 2N7002,215
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 180mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 10V
Rds On(Max) @ Id Vgs 6Ohm @ 115mA, 5V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2V @ 250µA 2.5V @ 250µA
Vgs(Max) ±20V ±30V
Input Capacitance(Ciss)(Max) @ Vds 23 pF @ 25 V 50 pF @ 10 V
Power Dissipation (Max) 370mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchMOS™
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