2N7002A-7 vs 2N7002DW

Esta comparação detalhada entre 2N7002A-7 e 2N7002DW fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002A-7 are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002 electrical family, and SOT-363 surface-mount footprint, making them strong functional replacement candidates. Designers should validate gate threshold spread, RDS(on) at the target VGS, and continuous drain current margin against the specific application before committing to a drop-in substitution.

Channel Configuration High match
Drain-Source Voltage Rating High match
Continuous Drain Current Validation required
On-Resistance RDS(on) Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002A-7

Diodes Incorporated

Lifecycle
Active
Stock
1569 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002A-7 2N7002DW
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 180mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 5V, 10V -
Rds On(Max) @ Id Vgs 6Ohm @ 115mA, 5V -
Vgs(th)(Max) @ Id 2V @ 250µA -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 23 pF @ 25 V -
Power Dissipation (Max) 370mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - 2N7002
Configuration - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Current - Continuous Drain (Id) @ 25°C - 115mA
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds - 50pF @ 25V
Power - Max - 200mW
Packaging - Cut Tape (CT), Tape & Reel (TR)
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