2N7002E-T1-E3 vs 2N7002V-TP

Esta comparação detalhada entre 2N7002E-T1-E3 e 2N7002V-TP fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 and 2N7002V-TP are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched drain-source voltage, continuous drain current, and power dissipation ratings, making them functionally interchangeable in most low-power switching and level-shifting applications. Designers should verify gate threshold voltage tolerance and RDS(on) at the specific drive voltage used in their circuit before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Gate Threshold Voltage Validation required
On-Resistance RDS(on) Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E-T1-E3 2N7002V-TP
Supplier - Micro Commercial Co
Part Status Active Obsolete
FET Type N-Channel 2 N-Channel (Dual)
FET Feature - Standard
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 240mA (Ta) 280mA
Rds On(Max) @ Id Vgs 3Ohm @ 250mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds 21 pF @ 5 V 50pF @ 25V
Power - Max - 150mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 350mW (Ta) -
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