2N7002K-T1-GE3 vs 2N7002K-7

Esta comparação detalhada entre 2N7002K-T1-GE3 e 2N7002K-7 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002K-T1-GE3 are functionally equivalent N-channel MOSFETs sharing identical electrical characteristics, package type, and pinout, making them suitable drop-in replacements for each other in most designs. The primary distinction lies in manufacturer sourcing and supply chain considerations rather than electrical performance.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
RDS(on) High match

Review the critical differences →

Parts at a glance

Part B

2N7002K-7

Diodes Incorporated

Lifecycle
Active
Stock
5630 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002K-T1-GE3 2N7002K-7
Series TrenchFET® -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 380mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V 0.3 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 30 pF @ 25 V 50 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Compare RFQ