APT30DQ120BG vs APT30GS60KRG

Esta comparação detalhada entre APT30DQ120BG e APT30GS60KRG fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification APT30DQ120BG APT30GS60KRG
Supplier - Microchip Technology
Part Status Active Obsolete
IGBT Type - NPT
Voltage - Collector Emitter Breakdown(Max) - 600 V
Current - Collector(Ic)(Max) - 54 A
Current - Collector Pulsed(Icm) - 113 A
Vce(on)(Max) @ Vge Ic - 3.15V @ 15V, 30A
Power - Max - 250 W
Switching Energy - 570µJ (off)
Input Type - Standard
Gate Charge - 145 nC
Td(on / off) @ 25°C - 16ns/360ns
Test Condition - 400V, 30A, 9.1Ohm, 15V
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Diode Type Standard -
Voltage - DC Reverse (Vr) (Max) 1200 V -
Current - Average Rectified(Io) 30A -
Voltage - Forward (Vf) (Max) @ If 3.3 V @ 30 A -
Speed Fast Recovery =< 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 320 ns -
Current - Reverse Leakage @ Vr 100 µA @ 1200 V -
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