AUIRFS4310Z vs AUIRF4905

Esta comparação detalhada entre AUIRFS4310Z e AUIRF4905 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

AUIRF4905

Rectificador Internacional

Lifecycle
Active
Stock
7041 PCS
Package
TO-220-3
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification AUIRFS4310Z AUIRF4905
Series HEXFET® HEXFET®
Part Status Obsolete Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 55 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 6mOhm @ 75A, 10V -
Vgs(th) (Max) @ Id 4V @ 150µA -
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 6860 pF @ 50 V -
Power Dissipation (Max) 250W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade Automotive -
Qualification AEC-Q101 -
Mounting Type Surface Mount Through Hole
Packaging Tube -
Current - Continuous Drain(Id) @ 25°C - 74A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 20mOhm @ 38A, 10V
Vgs(th)(Max) @ Id - 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 180 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 3400 pF @ 25 V