BAS16HT3G vs BAS16UE6727HTSA1

Esta comparação detalhada entre BAS16HT3G e BAS16UE6727HTSA1 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification BAS16HT3G BAS16UE6727HTSA1
Supplier onsemi,Rochester Electronics, LLC Infineon Technologies,Rochester Electronics, LLC
Series - Automotive, AEC-Q101
Part Status Active Last Time Buy
Diode Configuration - 3 Independent
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 80 V
Current - Average Rectified(Io)(per Diode) - 100mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.2 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 4 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V
Operating Temperature - Junction - 150°C (Max)
Mounting Type Surface Mount Surface Mount
Current - Average Rectified(Io) 200mA (DC) -
Capacitance @ Vr F 2pF @ 0V, 1MHz -