BSS84LT1G vs BSS84PH6327XTSA2

Esta comparação detalhada entre BSS84LT1G e BSS84PH6327XTSA2 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

BSS84LT1G

onsemi

Lifecycle: Active
Stock: 6051 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+Lista de Materiais RFQ

Part B

BSS84PH6327XTSA2

Tecnologias Infineon

Lifecycle: Active
Stock: 6512 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	BSS84LT1G	BSS84PH6327XTSA2
Series	-	SIPMOS®
Part Status	Active	Active
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V	60 V
Current - Continuous Drain(Id) @ 25°C	130mA (Ta)	170mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	5V	4.5V, 10V
Rds On(Max) @ Id Vgs	10Ohm @ 100mA, 5V	8Ohm @ 170mA, 10V
Vgs(th)(Max) @ Id	2V @ 250µA	2V @ 20µA
Gate Charge(Qg)(Max) @ Vgs	-	1.5 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	30 pF @ 5 V	19 pF @ 25 V
Power Dissipation (Max)	225mW (Ta)	360mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare RFQ