CSD17303Q5 vs CSD17575Q3

Esta comparação detalhada entre CSD17303Q5 e CSD17575Q3 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD17303Q5 CSD17575Q3
Series NexFET™ NexFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 100A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V -
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 8V -
Vgs(th) (Max) @ Id 1.6V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V -
Vgs (Max) +10V, -8V -
Input Capacitance (Ciss) (Max) @ Vds 3420 pF @ 15 V -
Power Dissipation (Max) 3.2W (Ta) 2.8W (Ta), 108W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Bulk -
Current - Continuous Drain(Id) @ 25°C - 60A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 2.3mOhm @ 25A, 10V
Vgs(th)(Max) @ Id - 1.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 30 nC @ 4.5 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 4420 pF @ 15 V
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