DMG1012T-7 vs DMG1029SV-7

Esta comparação detalhada entre DMG1012T-7 e DMG1029SV-7 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

DMG1012T-7

Diodes Incorporated

Lifecycle: Active
Stock: 6439 PCS
Package: SOT-523-3
Series: Transistors - FETs, MOSFETs - Single

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Part B

DMG1029SV-7

Diodes Incorporated

Lifecycle: Active
Stock: 4091 PCS
Package: SOT-563-6
Series: Transistores - FETs, MOSFETs - Arrays

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	DMG1012T-7	DMG1029SV-7
Part Status	Active	Active
FET Type	N-Channel	N and P-Channel
Technology	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	20 V	60V
Current - Continuous Drain(Id) @ 25°C	630mA (Ta)	500mA, 360mA
Drive Voltage(Max Rds On Min Rds On)	1.8V, 4.5V	-
Rds On(Max) @ Id Vgs	400mOhm @ 600mA, 4.5V	1.7Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id	1V @ 250µA	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	0.74 nC @ 4.5 V	0.3nC @ 4.5V
Vgs(Max)	±6V	-
Input Capacitance(Ciss)(Max) @ Vds	60.67 pF @ 16 V	30pF @ 25V
Power Dissipation (Max)	280mW (Ta)	-
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
FET Feature	-	Logic Level Gate
Power - Max	-	450mW

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