ECH8668-TL-H vs ECH8619-TL-E

Esta comparação detalhada entre ECH8668-TL-H e ECH8619-TL-E fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

ECH8668-TL-H

onsemi

Lifecycle: Active
Stock: 3 PCS
Package: 8-SMD, Flat Lead
Series: Transistores - FETs, MOSFETs - Arrays

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Part B

ECH8619-TL-E

onsemi

Lifecycle: Active
Stock: 5463 PCS
Package: 8-SMD, Flat Lead
Series: Transistores - FETs, MOSFETs - Arrays

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	ECH8668-TL-H	ECH8619-TL-E
Supplier	onsemi	onsemi
Part Status	Obsolete	Obsolete
FET Type	N and P-Channel	N and P-Channel
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	60V
Current - Continuous Drain(Id) @ 25°C	7.5A, 5A	3A, 2A
Rds On(Max) @ Id Vgs	17mOhm @ 4A, 4.5V	93mOhm @ 1.5A, 10V
Gate Charge(Qg)(Max) @ Vgs	10.8nC @ 4.5V	12.8nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds	1060pF @ 10V	560pF @ 20V
Power - Max	1.5W	1.5W
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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