FDG6303N vs FDG6301N_D87Z

Esta comparação detalhada entre FDG6303N e FDG6301N_D87Z fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification FDG6303N FDG6301N_D87Z
Supplier - onsemi
Part Status Obsolete Obsolete
FET Type - 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 25V 25V
Current - Continuous Drain(Id) @ 25°C - 220mA
Rds On(Max) @ Id Vgs - 4Ohm @ 220mA, 4.5V
Vgs(th)(Max) @ Id - 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 0.4nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds - 9.5pF @ 10V
Power - Max 300mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number FDG6303 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) -
Current - Continuous Drain (Id) @ 25°C 500mA -
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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