G5S12002C vs G5S12008C

Esta comparação detalhada entre G5S12002C e G5S12008C fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

G5S12002C

Global Power Technology Co. Ltd.

Lifecycle
Active
Stock
2987 PCS
Package
TO-252-3
Series
Diodes - Rectificadores - Single
+Lista de Materiais RFQ
Part B

G5S12008C

Global Power Technology Co. Ltd.

Lifecycle
Active
Stock
8063 PCS
Package
TO-252-3
Series
Diodes - Rectificadores - Single
+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification G5S12002C G5S12008C
Supplier Global Power Technology Co. Ltd Global Power Technology Co. Ltd
Part Status Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified(Io) 8.8A (DC) 28.9A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 2 A 1.7 V @ 8 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V 50 µA @ 1200 V
Capacitance @ Vr F 170pF @ 0V, 1MHz 550pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
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