IR2112S vs IR2112STR

Esta comparação detalhada entre IR2112S e IR2112STR fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IR2112S IR2112STR
Part Status Obsolete Obsolete
Driven Configuration High-Side, Low-Side High-Side or Low-Side
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type IGBT, MOSFET (N-Channel) IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VILVIH - 6V, 9.5V
Current - Peak Output(Source Sink) - 250mA, 500mA
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max(Bootstrap) - 600 V
Rise / Fall Time(Typ) - 80ns, 40ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number IR2112 -
Digi Key Programmable Not Verified -
Logic Voltage - VIL, VIH 6V, 9.5V -
Current - Peak Output (Source, Sink) 250mA, 500mA -
High Side Voltage - Max (Bootstrap) 600 V -
Rise / Fall Time (Typ) 80ns, 40ns -
Packaging Tube -
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