IR2113PBF vs IR2110-1

Esta comparação detalhada entre IR2113PBF e IR2110-1 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IR2113PBF

Tecnologias Infineon

Lifecycle: Active
Stock: 7002 PCS
Package: DIP-14
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

Part B

IR2110-1

Tecnologias Infineon

Lifecycle: Active
Stock: 4071 PCS
Package: DIP-14
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IR2113PBF	IR2110-1
Part Status	Active	Obsolete
Driven Configuration	Half-Bridge	Half-Bridge
Channel Type	Independent	Independent
Number of Drivers	2	2
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	3.3V ~ 20V	3.3V ~ 20V
Logic Voltage - VILVIH	6V, 9.5V	6V, 9.5V
Current - Peak Output(Source Sink)	2A, 2A	2A, 2A
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	500 V
Rise / Fall Time(Typ)	25ns, 17ns	25ns, 17ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole

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