IRF5305PBF vs IRF530PBF

Esta comparação detalhada entre IRF5305PBF e IRF530PBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF5305PBF

Tecnologias Infineon

Lifecycle: Active
Stock: 7745 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

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Part B

IRF530PBF

Vishay Siliconix

Lifecycle: Active
Stock: 6309 PCS
Package: TO-220-3
Series: Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF5305PBF	IRF530PBF
Series	HEXFET®	-
Part Status	Active	Active
FET Type	P-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V	100 V
Current - Continuous Drain(Id) @ 25°C	31A (Tc)	14A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	60mOhm @ 16A, 10V	160mOhm @ 8.4A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	63 nC @ 10 V	26 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	1200 pF @ 25 V	670 pF @ 25 V
Power Dissipation (Max)	110W (Tc)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

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