IRFB7530PBF vs IRFB7545PBF

Esta comparação detalhada entre IRFB7530PBF e IRFB7545PBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB7530PBF IRFB7545PBF
Series HEXFET®, StrongIRFET™ HEXFET®, StrongIRFET™
Part Status Not For New Designs Active
Base Product Number IRFB7530 -
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V -
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V -
Vgs(th) (Max) @ Id 3.7V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 411 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 13703 pF @ 25 V -
Power Dissipation (Max) 375W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Packaging Tube -
Current - Continuous Drain(Id) @ 25°C - 95A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 6V, 10V
Rds On(Max) @ Id Vgs - 5.9mOhm @ 57A, 10V
Vgs(th)(Max) @ Id - 3.7V @ 100µA
Gate Charge(Qg)(Max) @ Vgs - 110 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 4010 pF @ 25 V
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