IRFP4229PBF vs IRFP450

Esta comparação detalhada entre IRFP4229PBF e IRFP450 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

IRFP450

STMicroeletrônica

Lifecycle
Active
Stock
1863 PCS
Package
TO-247-3
Series
Transistors - FETs, MOSFETs - Single
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFP4229PBF IRFP450
Series HEXFET® PowerMESH™ II
Part Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 500 V
Current - Continuous Drain(Id) @ 25°C 44A (Tc) 14A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 46mOhm @ 26A, 10V 380mOhm @ 7A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 110 nC @ 10 V 90 nC @ 10 V
Vgs(Max) ±30V ±30V
Input Capacitance(Ciss)(Max) @ Vds 4560 pF @ 25 V 2000 pF @ 25 V
Power Dissipation (Max) 310W (Tc) 190W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
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