IRFP4768PBF vs IRFP4468PBF

Esta comparação detalhada entre IRFP4768PBF e IRFP4468PBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFP4768PBF IRFP4468PBF
Series HEXFET® HEXFET®
Part Status Last Time Buy Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 100 V
Current - Continuous Drain(Id) @ 25°C - 195A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 2.6mOhm @ 180A, 10V
Vgs(th)(Max) @ Id - 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 540 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 19860 pF @ 50 V
Power Dissipation (Max) 520W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Base Product Number IRFP4768 -
Current - Continuous Drain (Id) @ 25°C 93A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 17.5mOhm @ 56A, 10V -
Vgs(th) (Max) @ Id 5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 10880 pF @ 50 V -
Packaging Tube -
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