IRGIB15B60KD1P vs IRGIB6B60KDPBF

Esta comparação detalhada entre IRGIB15B60KD1P e IRGIB6B60KDPBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRGIB15B60KD1P

Tecnologias Infineon

Lifecycle: Active
Stock: 4013 PCS
Package: TO-220-3
Series: Transistores - IGBTs - Single

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Part B

IRGIB6B60KDPBF

Tecnologias Infineon

Lifecycle: Active
Stock: 7268 PCS
Package: TO-220-3
Series: Transistores - IGBTs - Single

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRGIB15B60KD1P	IRGIB6B60KDPBF
Supplier	Rochester Electronics, LLC,Infineon Technologies	Infineon Technologies
Part Status	Obsolete	Obsolete
IGBT Type	NPT	NPT
Voltage - Collector Emitter Breakdown(Max)	600 V	600 V
Current - Collector(Ic)(Max)	19 A	11 A
Current - Collector Pulsed(Icm)	38 A	22 A
Vce(on)(Max) @ Vge Ic	2.2V @ 15V, 15A	2.2V @ 15V, 5A
Power - Max	52 W	38 W
Switching Energy	127µJ (on), 334µJ (off)	110µJ (on), 135µJ (off)
Input Type	Standard	Standard
Gate Charge	56 nC	18.2 nC
Td(on / off) @ 25°C	30ns/173ns	25ns/215ns
Test Condition	400V, 15A, 22Ohm, 15V	400V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr)	67 ns	70 ns
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

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