IRLML2502TRPBF vs IRLML5103TRPBF

Esta comparação detalhada entre IRLML2502TRPBF e IRLML5103TRPBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRLML2502TRPBF IRLML5103TRPBF
Series HEXFET® HEXFET®
Part Status Last Time Buy Active
Base Product Number IRLML2502 -
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 45mOhm @ 4.2A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 15 V -
Power Dissipation (Max) 1.25W (Ta) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 760mA (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 600mOhm @ 600mA, 10V
Vgs(th)(Max) @ Id - 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 5.1 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 75 pF @ 25 V
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