JANTX2N7236 vs JANTX2N2326S

Esta comparação detalhada entre JANTX2N7236 e JANTX2N2326S fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

JANTX2N7236

Microsemi Corporation

Lifecycle: Active
Stock: 2916 PCS
Package: TO-254AA
Series: Transistors - FETs, MOSFETs - Single

+Lista de Materiais RFQ

Part B

JANTX2N2326S

Tecnologia Microchip

Lifecycle: Active
Stock: 9154 PCS
Package: TO-205AA, TO-5-3 Metal Can
Series: Tiristas - SCRs

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	JANTX2N7236	JANTX2N2326S
Supplier	-	Microchip Technology
Series	Military, MIL-PRF-19500/595	Military, MIL-PRF-19500/276
Part Status	Obsolete	Obsolete
Voltage - Off State	-	200 V
Voltage - Gate Trigger(Vgt)(Max)	-	800 mV
Current - Gate Trigger(Igt)(Max)	-	200 µA
Current - On State(It(AV))(Max)	-	220 mA
Current - Hold(Ih)(Max)	-	2 mA
SCR Type	-	Sensitive Gate
Operating Temperature	-55°C ~ 150°C (TJ)	-65°C ~ 125°C
Mounting Type	Through Hole	Through Hole
FET Type	P-Channel	-
Technology	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	100 V	-
Current - Continuous Drain(Id) @ 25°C	18A (Tc)	-
Drive Voltage(Max Rds On Min Rds On)	10V	-
Rds On(Max) @ Id Vgs	220mOhm @ 18A, 10V	-
Vgs(th)(Max) @ Id	4V @ 250µA	-
Gate Charge(Qg)(Max) @ Vgs	60 nC @ 10 V	-
Vgs(Max)	±20V	-
Power Dissipation (Max)	4W (Ta), 125W (Tc)	-

Compare RFQ