MUN5330DW1T1G vs MUN5332DW1T1

Esta comparação detalhada entre MUN5330DW1T1G e MUN5332DW1T1 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MUN5330DW1T1G

onsemi

Lifecycle: Active
Stock: 16706 PCS
Package: SC-88
Series: Transistores - Bipolares (BJT) - Arrays, Pre-Biased

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Part B

MUN5332DW1T1

onsemi

Lifecycle: Active
Stock: 3981 PCS
Package: SC-88
Series: Transistores - Bipolares (BJT) - Arrays, Pre-Biased

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	MUN5330DW1T1G	MUN5332DW1T1
Supplier	onsemi	onsemi
Part Status	Active	Obsolete
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector(Ic)(Max)	100mA	100mA
Voltage - Collector Emitter Breakdown(Max)	50V	50V
Resistor - Base(R1)	1kOhms	4.7kOhms
Resistor - Emitter Base(R2)	1kOhms	4.7kOhms
DC Current Gain(h FE)(Min) @ Ic Vce	3 @ 5mA, 10V	15 @ 5mA, 10V
Vce Saturation(Max) @ Ib Ic	250mV @ 5mA, 10mA	250mV @ 1mA, 10mA
Current - Collector Cutoff(Max)	500nA	500nA
Power - Max	250mW	250mW
Mounting Type	Surface Mount	Surface Mount

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