NCP51530BDR2G vs NCP5109BDR2G

Esta comparação detalhada entre NCP51530BDR2G e NCP5109BDR2G fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

NCP51530BDR2G

onsemi

Lifecycle: Active
Stock: 4017 PCS
Series: Power Management (PMIC) - Full, Half-Bridge (H Bridge) Drivers

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Part B

NCP5109BDR2G

onsemi

Lifecycle: Active
Stock: 7187 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	NCP51530BDR2G	NCP5109BDR2G
Part Status	Active	Active
Driven Configuration	-	Half-Bridge
Channel Type	-	Independent
Number of Drivers	-	2
Gate Type	-	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 17V	10V ~ 20V
Logic Voltage - VILVIH	-	0.8V, 2.3V
Current - Peak Output(Source Sink)	-	250mA, 500mA
Input Type	-	Non-Inverting
High Side Voltage - Max(Bootstrap)	-	200 V
Rise / Fall Time(Typ)	-	85ns, 35ns
Operating Temperature	-40°C ~ 125°C (TJ)	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Base Product Number	NCP51530	-
Output Configuration	Half Bridge (2)	-
Applications	General Purpose	-
Interface	Logic, PWM	-
Load Type	Inductive, Capacitive	-
Technology	Power MOSFET	-
Current - Output / Channel	3.5A	-
Current - Peak Output	3A	-
Voltage - Load	700V	-
Features	Bootstrap Circuit	-
Fault Protection	UVLO	-
Packaging	Cut Tape (CT), Tape & Reel (TR)	-

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