SBC846BWT1G vs SBC847BDW1T1G

Esta comparação detalhada entre SBC846BWT1G e SBC847BDW1T1G fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

SBC846BWT1G

onsemi

Lifecycle: Active
Stock: 4193 PCS
Package: SOT-323
Series: Transistores - Bipolares (BJT) - Single

+Lista de Materiais RFQ

Part B

SBC847BDW1T1G

onsemi

Lifecycle: Active
Stock: 7174 PCS
Package: SOT-363-6
Series: Transistores - Bipolares (BJT) - Arrays

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	SBC846BWT1G	SBC847BDW1T1G
Series	Automotive, AEC-Q101	Automotive, AEC-Q101
Part Status	Active	Active
Transistor Type	NPN	2 NPN (Dual)
Current - Collector(Ic)(Max)	100 mA	100mA
Voltage - Collector Emitter Breakdown(Max)	65 V	45V
Vce Saturation(Max) @ Ib Ic	600mV @ 5mA, 100mA	600mV @ 5mA, 100mA
Current - Collector Cutoff(Max)	15nA (ICBO)	15nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce	200 @ 2mA, 5V	200 @ 2mA, 5V
Power - Max	150 mW	380mW
Frequency - Transition	100MHz	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare RFQ