SI2303CDS-T1-GE3 vs SI2301-TP

Esta comparação detalhada entre SI2303CDS-T1-GE3 e SI2301-TP fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

SI2301-TP

Micro Commercial Co.

Lifecycle
Active
Stock
3274 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SI2303CDS-T1-GE3 SI2301-TP
Series TrenchFET® -
Part Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain(Id) @ 25°C 2.7A (Tc) 2.8A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On(Max) @ Id Vgs 190mOhm @ 1.9A, 10V 120mOhm @ 2.8A, 4.5V
Vgs(th)(Max) @ Id 3V @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 8 nC @ 10 V 14.5 nC @ 4.5 V
Vgs(Max) ±20V ±8V
Input Capacitance(Ciss)(Max) @ Vds 155 pF @ 15 V 880 pF @ 6 V
Power Dissipation (Max) 1W (Ta), 2.3W (Tc) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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