SI2300DS-T1-GE3 vs SI2305-TP

Esta comparação detalhada entre SI2300DS-T1-GE3 e SI2305-TP fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

SI2300DS-T1-GE3

Vishay Siliconix

Lifecycle: Active
Stock: 1897 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

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Part B

SI2305-TP

Micro Commercial Co.

Lifecycle: Active
Stock: 6247 PCS
Package: SOT-23
Series: Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	SI2300DS-T1-GE3	SI2305-TP
Series	TrenchFET®	-
Part Status	Active	Active
FET Type	N-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	8 V
Current - Continuous Drain(Id) @ 25°C	3.6A (Tc)	4.1A (Ta)
Drive Voltage(Max Rds On Min Rds On)	2.5V, 4.5V	4.5V
Rds On(Max) @ Id Vgs	68mOhm @ 2.9A, 4.5V	90mOhm @ 2A, 1.8V
Vgs(th)(Max) @ Id	1.5V @ 250µA	900mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs	10 nC @ 10 V	15 nC @ 4.5 V
Vgs(Max)	±12V	±8V
Input Capacitance(Ciss)(Max) @ Vds	320 pF @ 15 V	-
Power Dissipation (Max)	1.1W (Ta), 1.7W (Tc)	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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