STF10N105K5 vs STF10NM60N

Esta comparação detalhada entre STF10N105K5 e STF10NM60N fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification STF10N105K5 STF10NM60N
Series MDmesh™ K5 MDmesh™ II
Part Status Active Active
Base Product Number STF10 -
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1050 V 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3A, 10V -
Vgs(th) (Max) @ Id 5V @ 100µA -
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V -
Vgs (Max) 30V -
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 100 V -
Power Dissipation (Max) 30W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Packaging Tube -
Current - Continuous Drain(Id) @ 25°C - 10A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 550mOhm @ 4A, 10V
Vgs(th)(Max) @ Id - 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 19 nC @ 10 V
Vgs(Max) - ±25V
Input Capacitance(Ciss)(Max) @ Vds - 540 pF @ 50 V
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