STGW60V60DF vs STGW60H65DF

Esta comparação detalhada entre STGW60V60DF e STGW60H65DF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

STGW60V60DF

STMicroeletrônica

Lifecycle: Active
Stock: 4362 PCS
Package: TO-247
Series: Transistores - IGBTs - Single

+Lista de Materiais RFQ

Part B

STGW60H65DF

STMicroeletrônica

Lifecycle: Active
Stock: 3361 PCS
Package: TO-247-3
Series: Transistores - IGBTs - Single

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	STGW60V60DF	STGW60H65DF
Supplier	-	STMicroelectronics
Part Status	Active	Obsolete
IGBT Type	Trench Field Stop	Trench Field Stop
Voltage - Collector Emitter Breakdown(Max)	600 V	650 V
Current - Collector(Ic)(Max)	80 A	120 A
Current - Collector Pulsed(Icm)	240 A	240 A
Vce(on)(Max) @ Vge Ic	2.3V @ 15V, 60A	1.9V @ 15V, 60A
Power - Max	375 W	360 W
Switching Energy	750µJ (on), 550µJ (off)	1.5mJ (on), 1.1mJ (off)
Input Type	Standard	Standard
Gate Charge	334 nC	206 nC
Td(on / off) @ 25°C	60ns/208ns	67ns/165ns
Test Condition	400V, 60A, 4.7Ohm, 15V	400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)	74 ns	62 ns
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole

Compare RFQ