STPSC40H12CWL vs STPSC1006G-TR

Esta comparação detalhada entre STPSC40H12CWL e STPSC1006G-TR fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification STPSC40H12CWL STPSC1006G-TR
Supplier STMicroelectronics STMicroelectronics
Part Status Active Obsolete
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 600 V
Current - Average Rectified(Io) - 10A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 20 A 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 120 µA @ 1200 V 150 µA @ 600 V
Capacitance @ Vr F - 650pF @ 0V, 1MHz
Mounting Type Through Hole Surface Mount
Series ECOPACK® -
Diode Configuration 1 Pair Common Cathode -
Current - Average Rectified(Io)(per Diode) 38A -
Operating Temperature - Junction -40°C ~ 175°C -
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