UCC27211DR vs UCC27325DR

Esta comparação detalhada entre UCC27211DR e UCC27325DR fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

UCC27211DR

Texas Instruments

Lifecycle: Active
Stock: 2096 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

Part B

UCC27325DR

Texas Instruments

Lifecycle: Active
Stock: 6133 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	UCC27211DR	UCC27325DR
Part Status	Active	Active
Driven Configuration	Half-Bridge	Low-Side
Channel Type	Independent	Independent
Number of Drivers	2	2
Gate Type	N-Channel MOSFET	N-Channel, P-Channel MOSFET
Voltage - Supply	8V ~ 17V	4.5V ~ 15V
Logic Voltage - VILVIH	1.3V, 2.7V	1V, 2V
Current - Peak Output(Source Sink)	4A, 4A	4A, 4A
Input Type	Non-Inverting	Inverting, Non-Inverting
High Side Voltage - Max(Bootstrap)	120 V	-
Rise / Fall Time(Typ)	7.2ns, 5.5ns	20ns, 15ns
Operating Temperature	-40°C ~ 140°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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