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2ED020I12-F2
+Lista de MateriaisGate Drivers 1200V Isolated 2-CH, 2A,MillerClamp,DESA
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FabricanteTecnologias Infineon
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Peça do Fabricante #2ED020I12-F2
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Ficha Técnica 2ED020I12-F2 DataSheet
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Especificações
| Atributo | Valor |
| Packaging | MouseReel |
| StandardPackQty | 1000 |
Visão Geral
Description
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To gain a better understanding, I recommend consulting the specific catalog, database, or documentation related to "2ED020I12-F2" for precise details.
Equivalent
1. Texas Instruments UCC27714 - A dual-channel gate driver for IGBTs and MOSFETs.
2. ON Semiconductor NCP51530 - A high-speed, dual-channel gate driver.
3. STMicroelectronics L6386E - A high-voltage half-bridge driver for IGBTs/MOSFETs.
When selecting a replacement, ensure the electrical specifications and thermal characteristics match your application requirements.
Features
1. Dual Channel: Supports driving two separate power switches, making it suitable for half-bridge configurations.
2. Isolation: Features galvanic isolation, providing safe separation between control input and power output stages.
3. Output Current: Capable of sourcing and sinking large gate currents, which ensures fast charging and discharging of power transistor gates for efficient switching.
4. Protection: Includes protection features such as under-voltage lockout (UVLO) to prevent insufficient gate voltage, thereby avoiding malfunction.
5. Desaturation Detection: Quickly detects desaturation conditions (over-current events) in IGBTs to protect them from damage by triggering a shut-off.
6. Compact Package: Available in small form-factor packages, making it suitable for high-density power applications.
7. Wide Temperature Range: Designed to operate under a broad temperature range, ensuring reliability in harsh environments.
These features make it particularly useful in industrial drives, renewable energy inverters, and other high-power electronic applications.
Pinout
The key functions of the 2ED020I12-F2 include:
- Isolation and Level Shifting: It provides isolation and level shifting between the control signal and the power transistors.
- High-Side and Low-Side Driving: Capable of driving a high-side and a low-side switch in a half-bridge configuration.
- Protection and Fault Handling: Includes built-in protection features such as undervoltage lockout (UVLO) and interlock to prevent simultaneous conduction of both switches.
- Bootstrap Circuitry: Supports bootstrap operation for the high-side driver to maintain the gate voltage above the source voltage.
This IC is suitable for applications in motor drives, power supplies, and other high-power switching applications, where efficient and reliable gate driving is critical.
Manufacturer
Infineon was established in 1999 as a spin-off from Siemens AG's semiconductor division. Headquartered in Neubiberg, Germany, Infineon has grown to be one of the leading semiconductor companies globally, focusing heavily on innovation and sustainability. The company emphasizes energy efficiency, mobility, security, and IoT solutions, aligning with global trends and technological advancements.
In summary, Infineon Technologies is a prominent player in the semiconductor industry, known for its broad portfolio of products that cater to a variety of high-tech applications and industries.