Imagens apenas para referência
2EDN7524FXTMA1
+Lista de MateriaisIC GATE DRVR LOW-SIDE DSO8-60
-
FabricanteTecnologias Infineon
-
Peça do Fabricante #2EDN7524FXTMA1
-
Ficha Técnica 2EDN7524FXTMA1 DataSheet
-
Pacote DSO-8
-
Em Estoque4159
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | EiceDriver™ |
| Part Status | Active |
| Driven Configuration | Low-Side |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 4.5V ~ 20V |
| Current - Peak Output(Source Sink) | 5A, 5A |
| Input Type | Non-Inverting |
| Rise / Fall Time(Typ) | 5.3ns, 4.5ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key points:
- Technology: trench-style MOSFETs for low Rds(on) and fast switching
- Configuration: two N-channel MOSFETs in one device (per-device Vds and Id shown in the datasheet)
- Packaging: compact SMT package (TMA1 variant); consider thermal dissipation in your design
- Applications: synchronous buck/boost converters, motor drivers, power-switching stages, battery-powered systems
- Data: check the official datasheet for exact electrical specs, allowed operating conditions, and recommended circuit layouts
For precise values and to ensure correct application, refer to the manufacturer’s datasheet and product page.
Pinout
- Function: Dual N-channel enhancement-mode MOSFET pair in one package (common configuration for switching/half-bridge applications).
Manufacturer
What kind of company: A Japanese multinational semiconductor company that designs and manufactures microcontrollers, analog and power ICs, and other semiconductor solutions for automotive, industrial, and consumer markets.
