Imagens apenas para referência
2SK209-GR
+Lista de MateriaisJFETs S-MINI FET(LF),DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-07),
-
FabricanteToshibaCity name (optional, probably does not need a translation)
-
Peça do Fabricante #2SK209-GR
-
Ficha Técnica 2SK209-GR DataSheet
-
Em Estoque11430
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
Visão Geral
Description
Key specifications include:
- Drain-Source Voltage (V_DS): Typically around 50V
- Gate-Source Voltage (V_GS): Typically -55V
- Drain Current (I_D): Generally up to 20 mA
- Power Dissipation (P_D): Around 400 mW
The 2SK209-GR is often employed in switching applications due to its fast switching capabilities and is preferred in designs requiring minimal signal distortion. The "GR" suffix indicates a specific range for the IDSS (drain-source saturation current), ensuring compatibility in precision applications. Its compact TO-92 package makes it suitable for through-hole and general-purpose circuit designs. Overall, the 2SK209-GR's characteristics make it a versatile component in various analog and digital electronic circuits.
Equivalent
Features
1. Low On-Resistance: This feature ensures minimal power loss and efficient operation in switching applications.
2. High-Speed Switching: The 2SK209-GR supports quick transitions between on and off states, making it suitable for fast-switching circuits.
3. Low Gate Threshold Voltage: Typically around 0.8V to 1.5V, this allows the MOSFET to be fully turned on with lower voltage levels.
4. Compact Package: It often comes in small packages like SOT-23, which is ideal for space-constrained applications.
5. Low Input Capacitance: This feature facilitates high-frequency operations and reduces the load on driving circuits.
6. High Reliability and Durability: Built to withstand various electrical stresses, ensuring longevity in diverse applications.
Overall, the 2SK209-GR is widely used in amplifiers, signal processing, and other electronic switching applications due to its efficient, high-speed, and reliable performance.
Pinout
1. Gate (G): This pin controls the current flow between the drain and the source. It requires a voltage to turn on the MOSFET.
2. Source (S): This pin is the terminal through which the current enters the MOSFET. It is often connected to ground in many applications.
3. Drain (D): This pin is where the current exits the MOSFET. The current flows from drain to source when the MOSFET is on.
The 2SK209-GR is used for its low on-resistance and high-speed switching, making it suitable for various electronic applications, including signal amplification and load switching in low-power devices.
Manufacturer
Application
1. Audio Pre-amplifiers: Used for its low noise characteristics, making it ideal for microphones and other audio-processing circuits.
2. RF Amplifiers: Suitable for high-frequency applications due to its high input impedance.
3. Signal Amplification: Employed in various general-purpose amplification tasks.
4. Mixers and Oscillators: Used in RF and signal processing circuits for its stable performance.
5. Switching Applications: Can be used in low-power switching applications due to its fast switching speeds.
These applications leverage the JFET’s efficiency in handling low-level signals with minimal distortion.