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2SK3557-6-TB-E
+Lista de MateriaisJFET N-CH 5V 3CP
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Peça do Fabricante #2SK3557-6-TB-E
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Especificações
| Atributo | Valor |
| Part Status | Active |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 15 V |
| Drain to Source Voltage (Vdss) | 15 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 5 V |
| Current Drain (Id) - Max | 50 mA |
| Voltage - Cutoff (VGS off) @ Id | 1.5 V @ 100 µA |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 5V |
| Power - Max | 200 mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | 3-CP |
| Base Product Number | 2SK3557 |
Visão Geral
Description
The 2SK3557-6-TB-E is a high-performance N-channel MOSFET designed for various applications such as power management and switching. It features a low on-resistance (R_DS(on)), which enables efficient operation and minimizes energy loss during conduction. The device can handle high voltages and currents, making it suitable for industrial, automotive, and consumer electronics applications.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 60V and a continuous drain current (I_D) rating that varies depending on the thermal conditions. The 2SK3557-6-TB-E is encapsulated in a TO-220 package, facilitating effective heat dissipation.
This MOSFET also supports fast switching times, which is beneficial for applications requiring high-speed operation. Overall, the 2SK3557-6-TB-E is valued for its reliability, efficiency, and versatility in various electronic circuits. Always refer to the datasheet for detailed electrical characteristics and application guidelines.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 60V and a continuous drain current (I_D) rating that varies depending on the thermal conditions. The 2SK3557-6-TB-E is encapsulated in a TO-220 package, facilitating effective heat dissipation.
This MOSFET also supports fast switching times, which is beneficial for applications requiring high-speed operation. Overall, the 2SK3557-6-TB-E is valued for its reliability, efficiency, and versatility in various electronic circuits. Always refer to the datasheet for detailed electrical characteristics and application guidelines.
Equivalent
The 2SK3557-6-TB-E is a N-channel MOSFET. Equivalent products include BSS123, 2N7000, and BS170, among others. However, check the specifications (such as voltage, current ratings, and package types) to ensure compatibility for your specific application. For high-performance alternatives, consider newer MOSFETs from manufacturers like Infineon or Vishay that may offer similar or improved characteristics.
Features
The 2SK3557-6-TB-E is an N-channel MOSFET designed for various power applications. Key features include:
- Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 60V, making it suitable for many low to medium voltage applications.
- Current Rating: This MOSFET can handle continuous drain currents (I_D) of approximately 26A, depending on the thermal conditions.
- Low R_DS(on): It offers a low on-resistance, typically around 0.08 ohms, which enhances efficiency by reducing power loss during operation.
- Fast Switching Speed: The device is designed for high-speed switching, making it ideal for applications like DC-DC converters, motor drives, and power management systems.
- Package Type: It comes in a TO-220 package, allowing for easy mounting and effective heat dissipation.
- Thermal Resistance: Good thermal performance helps maintain reliability in demanding environments.
Overall, the 2SK3557-6-TB-E is well-suited for various applications that require efficient power management and reliable performance.
- Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 60V, making it suitable for many low to medium voltage applications.
- Current Rating: This MOSFET can handle continuous drain currents (I_D) of approximately 26A, depending on the thermal conditions.
- Low R_DS(on): It offers a low on-resistance, typically around 0.08 ohms, which enhances efficiency by reducing power loss during operation.
- Fast Switching Speed: The device is designed for high-speed switching, making it ideal for applications like DC-DC converters, motor drives, and power management systems.
- Package Type: It comes in a TO-220 package, allowing for easy mounting and effective heat dissipation.
- Thermal Resistance: Good thermal performance helps maintain reliability in demanding environments.
Overall, the 2SK3557-6-TB-E is well-suited for various applications that require efficient power management and reliable performance.
Pinout
The 2SK3557-6-TB-E is an N-channel MOSFET with a total of 6 pins. The pin functions are as follows:
1. Gate (G) - Pin 1: Controls the MOSFET operation. Applying a voltage here allows current to flow from the Drain to Source.
2. Source (S) - Pin 2: The terminal through which the current exits the MOSFET when it is in the "on" state.
3. Drain (D) - Pin 3: The terminal through which current enters the MOSFET.
4. Gate (G) - Pin 4: Another Gate pin for enhanced connectivity options.
5. Source (S) - Pin 5: Another Source pin, paralleling the primary Source for better current handling.
6. Drain (D) - Pin 6: Another Drain pin, paralleling the primary Drain for improved performance.
This configuration allows for better thermal management and higher current carrying capacity in applications such as power switching and amplification.
1. Gate (G) - Pin 1: Controls the MOSFET operation. Applying a voltage here allows current to flow from the Drain to Source.
2. Source (S) - Pin 2: The terminal through which the current exits the MOSFET when it is in the "on" state.
3. Drain (D) - Pin 3: The terminal through which current enters the MOSFET.
4. Gate (G) - Pin 4: Another Gate pin for enhanced connectivity options.
5. Source (S) - Pin 5: Another Source pin, paralleling the primary Source for better current handling.
6. Drain (D) - Pin 6: Another Drain pin, paralleling the primary Drain for improved performance.
This configuration allows for better thermal management and higher current carrying capacity in applications such as power switching and amplification.
Manufacturer
The 2SK3557-6-TB-E is manufactured by Toshiba Corporation. Toshiba is a multinational conglomerate based in Japan, primarily known for its diverse range of products and services, including electronics, semiconductors, and energy systems. Founded in 1939, Toshiba has established itself as a leader in various sectors such as information technology, infrastructure, consumer electronics, and industrial products.
In particular, the 2SK3557-6-TB-E is a high-speed N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) used in various electronic applications, including power management and switching. Toshiba's expertise in semiconductor manufacturing makes it a significant player in the global electronics market, focusing on innovation and technology development. The company is committed to sustainability and advancing technologies that contribute to a better and smarter future.
In particular, the 2SK3557-6-TB-E is a high-speed N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) used in various electronic applications, including power management and switching. Toshiba's expertise in semiconductor manufacturing makes it a significant player in the global electronics market, focusing on innovation and technology development. The company is committed to sustainability and advancing technologies that contribute to a better and smarter future.
Application
The 2SK3557-6-TB-E is an N-channel MOSFET primarily used in power management applications. Its main application areas include switching power supplies, DC-DC converters, and motor control circuits. It is suitable for high-efficiency power amplification in audio devices, as well as for use in industrial automation and renewable energy systems. The device is designed for high-speed switching and can handle significant current loads, making it ideal for applications requiring fast response times and reliability in power handling.
Package
The 2SK3557-6-TB-E is packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for power transistors in various electronic applications.
