Imagens apenas para referência
AIKW50N65DF5
+Lista de Materiais-
FabricanteTecnologias Infineon
-
Peça do Fabricante #AIKW50N65DF5
-
Em Estoque6430
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
Visão Geral
Description
Key features include its ability to operate at high temperatures, which makes it suitable for various industrial applications. Additionally, the device typically offers low gate charge characteristics, allowing for faster switching speeds and reduced energy losses.
When selecting a MOSFET like the AIKW50N65DF5 for a project, consider parameters such as gate threshold voltage, maximum power dissipation, and thermal resistance to ensure it meets the specific requirements of the application. Overall, this MOSFET is an efficient choice for managing high-power loads in electronic circuits.
Equivalent
1. Infineon IPW65R050C6
2. STMicroelectronics STP50NF65
3. ON Semiconductor NTMFS5C625NL
4. Vishay SiHG65N65E
5. Fairchild FDMS865N
Always verify specific characteristics like R_DS(on), package type, and thermal performance before substituting.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 50A, allowing for significant power handling.
3. Low R_DS(on): It has a low on-resistance, typically around 0.55 ohms, which minimizes power losses during operation and enhances efficiency.
4. Fast Switching: The device features fast switching capabilities, making it ideal for use in switching power supplies and inverter circuits.
5. Thermal Performance: Designed with a robust thermal performance, it can operate efficiently at high temperatures.
6. Package Type: Housed in a TO-220 package, it offers good thermal dissipation and ease of mounting.
This combination of features makes the AIKW50N65DF5 suitable for various applications, including power converters, motor drives, and renewable energy systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to conduct between the drain and source.
2. Drain (D): This is the terminal where current enters the MOSFET when it is turned on. The drain connects to the load.
3. Source (S): This is the terminal through which current exits the MOSFET. The source is typically connected to ground or a lower voltage in the circuit.
The AIKW50N65DF5 is rated for a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 50A, making it suitable for applications such as power supplies and motor control.
Manufacturer
Application
1. Switching Power Supplies: For efficient voltage regulation and management.
2. Motor Drives: In industrial and automotive applications for efficient control of electric motors.
3. Inverters: Used in renewable energy systems, such as solar inverters.
4. DC-DC Converters: For voltage conversion in various electronic devices.
5. UPS Systems: To ensure reliable power backup and management.
Its high voltage rating and low on-resistance make it suitable for various demanding applications in power management.