AO6604

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AO6604

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MOSFET N/P-CH 20V 6-TSOP

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N and P-Channel Complementary
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain(Id) @ 25°C 3.4A, 2.5A
Rds On(Max) @ Id Vgs 65mOhm @ 3.4A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 3.8nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 320pF @ 10V
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Visão Geral

Description

The AO6604 is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance (RDS(on)) and fast switching, making it ideal for load switching, power distribution, and DC-DC conversion in portable electronics, laptops, and other low-voltage systems.
Key specifications:
- Voltage Rating: 30V
- Current Rating: 6.5A per channel
- Low RDS(on): Typically 28mΩ (VGS = 10V)
- Logic-Level Gate Drive: Compatible with 4.5V+ signals
- Package: SOIC-8 (saves board space)
Advantages include reduced power loss, improved thermal performance, and compact design. Common uses include battery protection, motor control, and power supply circuits. Always refer to the datasheet for detailed electrical characteristics and application guidelines.

Equivalent

The AO6604 is a dual N-channel MOSFET. Equivalent or similar products include:
- SiA414DJ (Vishay)
- DMN2019LSN (Diodes Inc.)
- FDS6898A (ON Semiconductor)
- IRLML6402 (Infineon)
These alternatives offer comparable specs (30V, 5.5A) in SOT-23-6 packages. Verify pinout and electrical characteristics for compatibility.

Features

The AO6604 is a dual N-channel MOSFET with the following key features:
- Low On-Resistance (RDS(on)): Typically 28mΩ at VGS = 4.5V, reducing power loss.
- Low Gate Charge (Qg): Enhances switching efficiency.
- Compact Package: DFN3x3 (Dual Flat No-Lead) for space-saving designs.
- High Current Handling: Supports up to 8A continuous drain current per channel.
- Wide Voltage Range: Operates at 30V drain-to-source voltage (VDS).
- Logic-Level Gate Drive: Fully enhanced at 2.5V VGS, suitable for low-voltage applications.
- Fast Switching Speed: Improves performance in high-frequency circuits.
- Low Thermal Resistance: Optimized for heat dissipation.
Ideal for power management in portable devices, DC-DC converters, and load switches.

Manufacturer

The AO6604 is manufactured by Alpha and Omega Semiconductor (AOS), a U.S.-based company specializing in power semiconductors and ICs. AOS focuses on designing and producing high-performance power management solutions for consumer electronics, computing, and industrial applications. Known for innovation in MOSFETs and power ICs, AOS serves global markets with efficient, compact power components. The AO6604 is a dual N-channel MOSFET, commonly used in power management circuits.

Application

The AO6604 is a dual N-channel MOSFET used in various power management applications. Key areas include:
1. Power Supplies – DC-DC converters, voltage regulators.
2. Battery Management – Protection circuits, charging/discharging control.
3. Load Switching – Efficient power distribution in portable devices.
4. Motor Control – H-bridge drivers for small motors.
5. LED Drivers – Current regulation in lighting systems.
Its low on-resistance and high efficiency make it suitable for compact, energy-sensitive designs like smartphones, laptops, and IoT devices.

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