AOD417

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AOD417

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MOSFET P-CH 30V 25A TO252

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Especificações

Atributo Valor
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Last Time Buy
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 25A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 34mOhm @ 20A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 16.2 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 920 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta), 50W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252 (DPAK)

Visão Geral

Description

The AOD417 is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 30mΩ at VGS = 10V, reducing conduction losses.
- High Current Handling: Supports up to 30A continuous drain current (ID).
- Fast Switching: Optimized for applications like DC-DC converters, motor control, and power management.
- Low Gate Charge: Enhances efficiency in high-frequency circuits.
- Voltage Rating: 30V drain-to-source (VDSS), suitable for 12V–24V systems.
Packaged in a TO-252 (DPAK), it offers good thermal performance and is widely used in automotive, industrial, and consumer electronics. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet.

Equivalent

The AOD417 is a P-channel MOSFET. Equivalent or similar alternatives include:
- IRF9Z34N
- FQP27P06
- STP55P06F
- IRLML6401
These substitutes share comparable voltage, current, and package specs. Always verify datasheet parameters (VDS, ID, RDS(on)) for exact compatibility.

Features

The AOD417 is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-Source, VDS)
- Current Rating: 33A (Continuous Drain, ID)
- Low On-Resistance (RDS(on)): 4.5mΩ (max at VGS = 10V)
- Gate-Source Voltage (VGS): ±20V (max)
- Fast Switching: Suitable for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and load switching
It offers robust performance in compact designs with low power loss.

Pinout

The AOD417 is a P-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-side switching).
3. Source (S): Typically tied to the supply voltage.
Key Functions:
- Voltage Rating: -30V (drain-to-source).
- Current Handling: -30A (continuous).
- Low On-Resistance (RDS(on)): ~13mΩ (at VGS = -10V).
- Applications: Power switching, load control, and DC-DC conversion.
Compact and efficient for high-current applications.

Manufacturer

The AOD417 is a P-channel MOSFET manufactured by Alpha & Omega Semiconductor (AOS), a U.S.-based company specializing in power semiconductors. Founded in 2000 and headquartered in Silicon Valley, AOS designs and produces high-performance power management solutions for consumer electronics, computing, and industrial applications. The company is known for its innovation in power MOSFETs, ICs, and other semiconductor devices. The AOD417 is part of their extensive portfolio, offering efficient power switching for various electronic systems. AOS operates globally with manufacturing and R&D facilities in key regions.

Application

The AOD417 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Motor Control – Driving small motors in automotive and industrial systems.
4. LED Drivers – Efficient power control in lighting applications.
5. Consumer Electronics – Power switching in smartphones, tablets, and laptops.
Its low on-resistance and high current capability make it suitable for compact, energy-efficient designs.

Package

The AOD417 is a P-channel MOSFET typically available in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-power applications, and features a thermally efficient design with an exposed pad for heat dissipation. It is commonly used in power management circuits.

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