APTGT35X120T3G

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APTGT35X120T3G

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IGBT MODULE 1200V 55A 208W SP3

  • FabricanteTecnologia Microchip

  • Peça do Fabricante #APTGT35X120T3G

  • Pacote SP-3

  • Em Estoque2832

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Especificações

Atributo Valor
Supplier Microchip Technology
Package / Case Bulk
Part Status Active
IGBT Type Trench Field Stop
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown(Max) 1200 V
Current - Collector(Ic)(Max) 55 A
Power - Max 208 W
Vce(on)(Max) @ Vge Ic 2.1V @ 15V, 35A
Current - Collector Cutoff(Max) 250 µA
Input Capacitance(Cies) @ Vce 2.5 nF @ 25 V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount

Visão Geral

Description

APGT35X120T3G is a high-power semiconductor module in the APT GT family. It combines multiple switching devices—typically IGBTs with antiparallel diodes—in a single, common-coolant package for high-current, high-voltage power conversion.
Key points:
- Likely rated around 1200 V and tens of amperes (exact values in the datasheet).
- Used in power electronics: motor drives, inverters, solar/UPS, traction equipment.
- Package/drive: isolated baseplate needing a heatsink; requires an isolated gate driver and proper dead-time management.
- Specs to confirm: Vces, Ic, Vge, switching speeds, on-state voltage, thermal resistance.
For precise specifications and handling instructions, refer to the official datasheet from the manufacturer or authorized distributor. If you share your application, I can help map suitable drive circuitry and mounting considerations.

Equivalent

I don’t have a reliable cross-reference for APTGT35X120T3G. Please confirm the manufacturer or the chip’s key specs (Vces, Ic, package and type — IGBT, MOSFET, etc.). With those I can list exact equivalents (for example 35 A / 1200 V IGBTs from Infineon, STMicro, ON Semiconductor) and part numbers.

Features

I don’t have the exact datasheet for APTGT35X120T3G. Here are typical features you’d expect from an APT GT-series 1200 V, ~35 A IGBT in a T3G package (subject to confirmation from the official datasheet):
- 1200 V blocking voltage
- ~35 A continuous collector current
- Low Vce(sat) for efficient conduction
- High-speed switching with low switching losses
- Rugged dv/dt and di/dt tolerance; avalanche energy capability
- Gate drive: nominal ~10–15 V for turn-on; Vge threshold higher (3–5 V)
- Often include an anti-parallel diode (varies by variant)
- Three-terminal package (T3G) with good thermal path for heatsinking
- RoHS-compliant (where applicable)
For exact specs, parameters, and recommended operating conditions, please share the official datasheet or confirm the exact variant.

Pinout

APTGT35X120T3G is a 3‑lead power transistor in a TO‑247 style package. Pinout (front view, leads down):
- Pin 1: Gate (G)
- Pin 2: Collector (C)
- Pin 3: Emitter (E)
The metal mounting tab is electrically tied to the Collector.

Manufacturer

I can’t reliably identify the manufacturer from that part number alone. Would you like me to look up the datasheet online to identify the manufacturer and describe the company?

Application

APTG35X120T3G is a high-voltage, high-current IGBT module used in power-electronics bridge circuits. Common applications include:
- Solar/wind inverters
- AC motor drives and servo drives
- Uninterruptible power supplies (UPS) and grid/converter systems
- Welding power supplies and induction heating
- DC-DC converters and battery charging/discharging
- Electric vehicle charging equipment and traction power electronics
- Industrial power supplies and auxiliary power stages
Note: suitable for high-voltage, high-current switching in demanding industrial and energy applications.

Package

I don’t have live web access to look up APTGT35X120T3G datasheets. Please paste the datasheet or tell the manufacturer/model family, and I’ll identify the exact package type.

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