Imagens apenas para referência
AS4C8M16SB-6TIN
+Lista de MateriaisIC DRAM 128MBIT LVTTL 54TSOP II
-
FabricanteAlliance Memory, Inc.
-
Peça do Fabricante #AS4C8M16SB-6TIN
-
Em Estoque6005
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mbit |
| Memory Organization | 8M x 16 |
| Memory Interface | LVTTL |
| Write Cycle Time - Word, Page | 12ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Base Product Number | AS4C8M16 |
| Clock Frequency | 166 MHz |
| Access Time | 5 ns |
Visão Geral
Description
Key features of the AS4C8M16SB-6TIN include a fast access time of 60ns (nanoseconds), making it suitable for high-speed data processing tasks. The chip operates from a single 3.3V power supply, offering low power consumption, which is crucial for battery-powered and energy-efficient devices. It is housed in a 54-pin TSOP II package, allowing for compact integration into circuit boards.
The "6TIN" in its name often specifies certain temperature and packaging characteristics, indicating it is suitable for industrial temperature ranges. Overall, this DRAM chip is valued for its balance of performance, capacity, and power efficiency, making it a versatile choice in various technological applications.
Equivalent
1. Micron MT48LC8M16A2 – A 128Mb SDRAM with similar specifications.
2. Samsung K4S281632I – Another 128Mb SDRAM option.
3. Alliance Memory AS4C8M16 – A direct equivalent with similar performance.
4. ISSI IS42S16160 – A 128Mb SDRAM with comparable features.
When considering alternatives, ensure compatibility with your specific requirements in terms of speed, voltage, and temperature range.
Features
1. Capacity and Organization: 128 Megabit (8M x 16-bit configuration).
2. Speed: Operates at a clock frequency of up to 166 MHz with a cycle time of 6 ns.
3. Voltage: Requires a power supply of 3.3V ± 0.3V.
4. Interface: Synchronous interface for precise data access.
5. Burst Lengths: Supports burst lengths of 1, 2, 4, 8, and full-page for efficient data transfer.
6. Latency: Provides CAS latency options of 2 and 3, allowing for flexibility in performance tuning.
7. Package: Offered in a 54-pin TSOP II package for a compact form factor.
8. Temperature Range: Designed to operate within industrial temperature ranges from -40°C to 85°C, making it suitable for various applications.
9. Auto-Refresh: Includes auto-refresh and self-refresh modes for maintaining data integrity.
These features make the AS4C8M16SB-6TIN suitable for applications requiring reliable and efficient memory performance.
Pinout
- Data Pins (DQ0-DQ15): 16 data input/output pins.
- Address Pins (A0-A12): Address input pins allowing row and column selection within the memory array.
- Bank Address Pins (BA0-BA1): Bank select pins used to select one of the four available memory banks.
- Clock (CLK): Synchronizes operation of the memory.
- Clock Enable (CKE): Enables or disables the clock.
- Chip Select (CS#): Activates or deactivates the memory chip.
- Row Address Strobe (RAS#), Column Address Strobe (CAS#), and Write Enable (WE#): Control signals used to initiate read/write operations.
- Data Mask (UDQM, LDQM): Used for byte masking in data operations.
- Power (VDD, VSS): Power supply and ground connections.
This configuration allows the SDRAM to perform the storage and retrieval of data efficiently in a wide range of electronic applications.