AS4C8M32S-6TIN

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AS4C8M32S-6TIN

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IC DRAM 256MBIT PAR 86TSOP II

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Especificações

Atributo Valor
Package / Case Tray
Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 256Mb (8M x 32)
Memory Interface Parallel
Clock Frequency 166 MHz
Access Time 5.5 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

Visão Geral

Description

Equivalent

The AS4C8M32S-6TIN is a 256Mb SDRAM chip. Equivalent products include:
1. Micron MT48LC8M32B2 - A 256Mb SDRAM with similar speed and organization.
2. Samsung K4S561632J - Another 256Mb SDRAM option with comparable specifications.
3. ISSI IS42S32800F - A 256Mb SDRAM with similar configuration and performance.
4. Alliance Memory AS4C8M32S-7TCN - A direct equivalent with slightly different timing.
Make sure to compare the exact specifications to ensure compatibility.

Manufacturer

The AS4C8M32S-6TIN is manufactured by Alliance Memory, Inc. Alliance Memory is a company that specializes in providing legacy memory products, including SRAM, DRAM, and SDRAM. They focus on offering cost-effective memory solutions that cater to customers who require reliable and long-term support for older technologies. The company is known for supporting continued production of legacy memory devices that might be discontinued by larger manufacturers, thereby serving industries that rely on stable, long-term availability of these components.

Application

The AS4C8M32S-6TIN is a high-speed, low-power CMOS synchronous dynamic random-access memory (SDRAM) module. Its application areas include:
1. Consumer Electronics: Used in devices like TVs, set-top boxes, and gaming consoles for efficient data processing and storage.
2. Networking: Supports routers, switches, and other communication equipment by facilitating rapid data transfer.
3. Industrial Automation: Utilized in control systems requiring reliable and quick data access.
4. Automotive: Powers infotainment systems and advanced driver-assistance systems (ADAS).
5. Telecommunications: Enables high-speed data handling in base stations and infrastructure.
Its performance characteristics make it suitable for applications requiring high bandwidth and low latency.

Package

The AS4C8M32S-6TIN is a 256Mb SDRAM (synchronous DRAM) memory chip. It typically comes in a 90-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. This packaging is compact, supporting high-density integration suitable for various electronic applications.

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