AS6C1616-55TIN

The AS6C1616-55TIN is a high-speed, low-power CMOS static random access memory (SRAM) device with a storage capacity of 16 megabits, organized as 1,048,576 words by 16 bits. It is designed for applications requiring fast access times and low power consumption, making it suitable for use in battery-powered and portable devices. The "-55" in its name indicates a typical access time of 55 nanoseconds.
Key features of the AS6C1616-55TIN include low voltage operation, typically around 2.7V to 3.6V, and a standby current of just a few microamperes, enhancing its efficiency in energy-sensitive environments. The device is available in a 48-ball thin fine-pitch ball grid array (TFBGA) package, which is compact and suitable for space-constrained applications.
Furthermore, the AS6C1616-55TIN offers data retention and reliability, ensuring data preservation even in low power standby modes. Its industrial temperature range makes it robust for various operating conditions, making it a versatile choice for embedded systems and telecommunications applications.

The AS6C1616-55TIN is a 16Mbit (1M x 16) low power CMOS SRAM. Equivalent products can include:
1. Alliance Memory AS6C1616-55ZIN
2. Cypress CY62167EV30LL series
3. ISSI IS62WV102416BLL series
4. Renesas R1LV1616R series
5. Micron MT48LC16M16A2 series
These alternatives have similar specifications, but it's important to verify compatibility based on the specific application requirements.

The AS6C1616-55TIN is a low-power CMOS static RAM (SRAM) with the following key features:
1. Memory Organization: It is organized as 1M x 16 bits, providing a total of 16 megabits (2 megabytes) of memory storage.
2. Access Time: The device offers a fast access time of 55 nanoseconds, enabling quick data retrieval.
3. Low Power Consumption: It operates at a low power consumption level, making it suitable for battery-powered applications. Typically, it consumes less power in standby mode.
4. Supply Voltage: The SRAM operates within a wide voltage range, typically around 3.0V to 3.6V, facilitating compatibility with various systems.
5. Temperature Range: The "TIN" suffix indicates that the chip is designed for industrial temperature ranges, generally from -40°C to 85°C, making it suitable for harsh environmental conditions.
6. Data Retention: It features excellent data retention capabilities even at low voltages.
7. Package Type: Available in a standard 48-pin TSOP-I package, ensuring ease of integration into existing designs.
These features make the AS6C1616-55TIN a versatile choice for applications requiring reliable, high-speed, and low-power memory.

The AS6C1616-55TIN is a 16Mbit (1M x 16) low power CMOS static random-access memory (SRAM) chip. It features a 44-pin thin small outline package (TSOP) type II.
Key functions and features include:
- Access time of 55 ns.
- Operates with a single power supply of 2.7V to 3.6V.
- Provides low-power consumption, suitable for battery-operated systems.
- Data retention at a minimum voltage of 2V.
- Offers a standby current of 1µA and an operational current of 30mA.
- Supports byte and word access modes.
The pin configuration includes address, data, and control pins:
- 20 address pins (A0 to A19) for addressing memory locations.
- 16 data input/output pins (I/O0 to I/O15) for data transfer.
- Control pins for operational commands including Chip Enable (CE), Write Enable (WE), and Output Enable (OE).
This configuration provides a reliable and efficient memory solution for embedded systems and other applications requiring fast and low-power data storage.

The AS6C1616-55TIN is manufactured by Alliance Memory, Inc. Alliance Memory is a company that specializes in providing legacy memory products, such as SRAM, DRAM, and SDRAM, which are used in a wide range of applications including industrial, communications, and consumer electronics. The company focuses on supporting older technologies that are no longer produced by larger memory manufacturers, ensuring a supply of these components for industries that require long-term product availability.

The AS6C1616-55TIN is a low-power, high-speed CMOS Static Random Access Memory (SRAM). Its typical application areas include:
1. Embedded Systems: Utilized in microcontroller-based designs for buffering and temporary data storage.
2. Industrial Control: Employed in automation and control systems for reliable data retention.
3. Consumer Electronics: Used in devices like cameras and gaming consoles for fast data access.
4. Automotive Electronics: Applied in infotainment systems and advanced driver-assistance systems (ADAS).
5. Communication Equipment: Supports routers, switches, and other networking devices with efficient data management.
6. Medical Devices: Provides reliable memory for portable and non-portable medical equipment.
The AS6C1616-55TIN is valued for its low power consumption and fast access times.

The AS6C1616-55TIN is a 16M (1M x 16-bit) low power CMOS static RAM, typically packaged in a 44-pin TSOP II (Thin Small Outline Package Type II) or SOP (Small Outline Package) for surface mounting.