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AT45DB641E-MHN2B-T
+Lista de MateriaisIC FLASH 64MBIT SPI 85MHZ 8UDFN
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FabricanteAdesto Technologies
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Peça do Fabricante #AT45DB641E-MHN2B-T
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Pacote UDFN-8
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Em Estoque5215
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH |
| Memory Size | 64Mb (256 Bytes x 32K pages) |
| Memory Interface | SPI |
| Clock Frequency | 85 MHz |
| Write Cycle Time - Word Page | 8µs, 5ms |
| Voltage - Supply | 1.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The AT45DB641E-MHN2B-T offers advanced security features such as hardware and software protection mechanisms, including a write-protect pin and a sector-lockdown function, enhancing data integrity and security. The device is also equipped with a built-in write-buffer that allows for efficient page programming and a low-power sleep mode to conserve energy when the device is not in active use.
Housed in a small, 8-pin SOIC package, the AT45DB641E-MHN2B-T is suitable for a variety of applications, including consumer electronics, industrial systems, and embedded applications, where compactness and efficiency are crucial.
Equivalent
1. Winbond W25Q64FV - 64Mb Serial NOR Flash memory.
2. Macronix MX25L6406E - 64Mb Serial NOR Flash memory.
3. Cypress/Spansion S25FL064L - 64Mb Serial NOR Flash memory.
4. ISSI IS25LP064A - 64Mb Serial NOR Flash memory.
These alternatives offer similar functionality and capacity, but differences in specific features and performance may exist. Always verify compatibility with your application requirements.
Features
1. Memory Capacity: 64 Mbit (8 Mbyte).
2. Architecture: Data is organized in 256-byte pages, with 32,768 pages per device.
3. Performance: Fast read speeds up to 85 MHz.
4. Interface: Supports standard, dual, and quad SPI modes.
5. Operating Voltage: 2.3V to 3.6V.
6. Endurance: Offers a minimum of 100,000 program/erase cycles per sector.
7. Data Retention: 20 years.
8. Security: Features include user-programmable security registers and a unique device ID.
9. Power Management: Comes with deep power-down and standby modes to conserve energy.
10. Temperature Range: Supports a wide range from -40°C to +85°C.
11. Package: Available in a 9-ball Ultra-thin DFN (2x3 mm) package.
These features make it suitable for applications requiring reliable and efficient data storage, such as in industrial, consumer, and automotive sectors.
Pinout
The device comes in a 8-pin SOIC (Small Outline Integrated Circuit) package. The pinout and functions are as follows:
1. CS (Chip Select): Activates the device.
2. SCK (Serial Clock): Synchronizes data transfer between the microcontroller and the memory device.
3. SI (Serial Input): Receives instructions, addresses, and data.
4. SO (Serial Output): Outputs data.
5. WP (Write Protect): Used to freeze the status of the block protect bits.
6. RESET: Resets internal logic, useful for restarting the device.
7. VCC: Power supply pin.
8. GND: Ground reference pin.
This memory device is suitable for applications requiring reliable data storage with features like fast read/write operations, sector and page erase options, and built-in security features.
Manufacturer
Application
1. Consumer Electronics: For firmware storage and data logging in devices like digital cameras, audio players, and printers.
2. Automotive: Used in infotainment systems and navigation for storing maps and software updates.
3. Industrial Equipment: For data logging, configuration, and program storage in control systems and machinery.
4. Networking: Utilized in routers and switches for firmware and configuration storage.
5. IoT Devices: Storing sensors data, configuration, and firmware updates.
Its small form factor and low power consumption make it ideal for embedded systems with space and energy constraints.