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BAS16XV2T1G
+Lista de MateriaisDIODE GEN PURP 100V 200MA SOD523
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Fabricanteonsemi
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Peça do Fabricante #BAS16XV2T1G
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Pacote SOD-523
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 100 V |
| Current-AverageRectified(Io) | 200mA (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.25 V @ 150 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| ReverseRecoveryTime(trr) | 6 ns |
| Current-ReverseLeakage@Vr | 1 µA @ 100 V |
| Capacitance@VrF | 2pF @ 0V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | SC-79, SOD-523 |
| SupplierDevicePackage | SOD-523 |
Visão Geral
Description
Key features of the BAS16XV2T1G include its fast recovery time and low forward voltage drop, making it suitable for applications that require quick switching and energy efficiency. It is encapsulated in a compact SOT-23 package, which is beneficial for space-constrained designs.
The diode operates efficiently over a wide temperature range, which enhances its reliability in various environmental conditions. With a reverse voltage rating of approximately 75V and a forward current capability of up to 200mA, it is versatile for use in signal processing, rectification, and protection circuits.
Overall, the BAS16XV2T1G is valued for its performance in high-speed switching tasks, offering a balance of speed, efficiency, and compactness, making it a popular choice among design engineers.
Equivalent
1. BAS16 from Nexperia
2. BAS16-02W from Rohm
3. BAS16Wfrom Vishay
4. 1N4148WSfrom Diodes Incorporated
5. BAS16LT1G from ON Semiconductor
These diodes are typically used in similar applications for fast switching in electronic circuits. Always check the datasheets to ensure compatibility.
Features
1. SMD Package: It comes in a small SOT-23 surface-mount package, making it suitable for compact circuit designs.
2. High-Speed Switching: Designed to operate with fast switching speeds, enhancing the performance of high-frequency circuits.
3. Reverse Voltage: It can handle a reverse voltage up to 100V, providing robustness against voltage spikes.
4. Forward Current: The diode supports a forward current of 200mA, suitable for low to moderate power applications.
5. Low Capacitance: This feature minimizes interference in high-speed data communication.
6. Temperature Range: It operates reliably in a wide temperature range, typically from -55°C to +150°C, ensuring durability in various environmental conditions.
7. Low Leakage Current: Offers low reverse leakage current, contributing to energy efficiency.
These attributes make the BAS16XV2T1G ideal for applications such as signal processing, voltage clamping, and rectification in power supplies.
Pinout
1. Pin 1 (Anode): The positive side of the diode, where current flows into the diode.
2. Pin 2 (Cathode): The negative side of the diode, marked with a line on the package, where current flows out of the diode.
3. Pin 3: This pin is typically not connected internally but is present due to the SOT-23 package.
The BAS16XV2T1G is used in high-speed switching applications due to its fast switching times and low forward voltage drop.
Manufacturer
Application
1. Signal Processing: Useful in radio frequency (RF) and high-speed digital circuits for signal modulation and demodulation.
2. Switching Circuits: Employed in circuits requiring fast switching times, such as pulse shaping and waveform generation.
3. Voltage Clamping: Protects sensitive electronic components by clamping voltage levels.
4. Rectification: Used in low-current rectification applications within power supplies and DC converters.
5. Protection Circuits: Provides overvoltage protection in various electronic devices.
6. RF Attenuators: Implemented in RF attenuation circuits due to its fast response.
These applications leverage its fast switching capabilities and compact package design.