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BC846BPN
+Lista de MateriaisBipolar Transistors - BJT
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Description
This device offers a high current gain, typically around 200, making it efficient for amplification tasks. The BC846BPN operates effectively in a wide temperature range, typically from -65°C to +150°C, which enhances its reliability in various environmental conditions. It is often employed in audio, signal processing, and microcontroller interfacing due to its fast switching capabilities.
The dual nature of this transistor package allows for greater design flexibility, enabling designers to use two matched transistors in a single, space-efficient package which reduces component count and PCB space.
Equivalent
Features
1. Transistor Configuration: It contains one NPN transistor and one PNP transistor, making it suitable for various amplification and switching applications.
2. Compact Package: The SOT-363 package is a small surface-mount design, ideal for space-constrained applications.
3. Current and Voltage Ratings: The transistors typically have a collector current (Ic) rating of 100 mA and a collector-emitter voltage (Vceo) of 65V.
4. Gain: It offers a DC current gain (hFE) ranging from 110 to 800, depending on the specific model within the series.
5. Applications: It is commonly used in signal processing, switching circuits, and amplification tasks in portable electronics and other compact devices.
6. Operating Temperature: The operating temperature range is typically from -55°C to +150°C, suitable for various environmental conditions.
These features make the BC846BPN a versatile choice for designers needing a dual-transistor solution in a small form factor.
Pinout
Here's a brief description of the pin functions:
1. Pin 1 (B1): Base of the first transistor.
2. Pin 2 (E1): Emitter of the first transistor.
3. Pin 3 (C2): Collector of the second transistor.
4. Pin 4 (B2): Base of the second transistor.
5. Pin 5 (E2): Emitter of the second transistor.
6. Pin 6 (C1): Collector of the first transistor.
This dual-transistor configuration allows for compact design in electronic circuits where space is limited, offering similar electrical characteristics to discrete transistors but with reduced board footprint.