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BC847PN-7-F
+Lista de MateriaisTRANS NPN/PNP 45V 100MA SOT-363
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FabricanteDiodes Incorporated
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Peça do Fabricante #BC847PN-7-F
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Ficha Técnica BC847PN-7-F DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Base Product Number | BC847 |
| Transistor Type | 1 NPN, 1 PNP |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 200 @ 2mA, 5V / 220 @ 2mA, 5V |
| Power - Max | 200mW |
| Frequency - Transition | 300MHz, 200MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Visão Geral
Description
Key specifications include a maximum collector-emitter voltage (Vce) of 45V, a collector current (Ic) of 100mA, and a power dissipation of 200mW. The device exhibits a high current gain (hFE) that typically ranges from 200 to 450, making it suitable for applications requiring efficient amplification. With a transition frequency (fT) of approximately 100 MHz, the BC847PN-7-F can handle high-speed switching tasks effectively.
Its small SOT-363 packaging allows for space-efficient designs, making it ideal for compact electronic devices. The BC847PN-7-F is commonly used in audio processing, signal amplification, and switching applications where reliability, performance, and size are critical considerations.
Equivalent
1. BC847BV - A dual NPN transistor that offers similar functionality.
2. BC847BS - Another dual NPN transistor alternative.
3. BC846PN - Similar dual transistor featuring both NPN and PNP transistors.
4. BCV47 - A dual transistor with comparable specifications.
These equivalents should be checked for exact match in specifications such as breakdown voltage and current ratings for proper replacement.
Features
1. Dual Transistors: Integrates two NPN transistors, allowing for greater efficiency and compact PCB designs.
2. High Current Gain: Provides a high DC current gain, which enhances its amplification capabilities.
3. Low Power Consumption: Suited for battery-operated devices due to its low power requirements.
4. Wide Operating Range: The transistor operates effectively across a broad temperature range, making it suitable for various environments.
5. Package Type: Housed in a SOT-363 package, which is small and lightweight, ideal for space-constrained applications.
6. RoHS Compliant: Environmentally friendly, meeting all necessary hazardous substances regulations.
7. Reliable Performance: Offers consistent performance with a maximum collector current of 100 mA and a collector-emitter voltage of 45 V.
These features make the BC847PN-7-F suitable for general switching and amplification tasks in various electronic devices.
Pinout
The pin configuration typically consists of:
- Pin 1: Collector (Q1)
- Pin 2: Base (Q1)
- Pin 3: Emitter (Q1)
- Pin 4: Emitter (Q2)
- Pin 5: Base (Q2)
- Pin 6: Collector (Q2)
This dual-transistor configuration allows for compact circuit designs and is often used in applications requiring two closely matched NPN transistors. The BC847PN-7-F is widely used in signal processing, within switching circuits, and as a component for general-purpose amplification tasks.