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BGA735N16E6327XTSA1
+Lista de MateriaisIC AMP UMTS 800MHZ 900MHZ TSNP16
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FabricanteTecnologias Infineon
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Peça do Fabricante #BGA735N16E6327XTSA1
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Ficha Técnica BGA735N16E6327XTSA1 DataSheet
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Pacote XFQFN-16
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Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| Frequency | 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz |
| P1d B | -6dBm |
| Gain | 16dB |
| Noise Figure | 1.1dB |
| RF Type | UMTS |
| Voltage - Supply | 3.6V |
| Supply Current | 10mA |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key features of the BGA735N16E6327XTSA1 include high linearity, excellent gain performance, and low noise figure, which contribute to enhancing the overall signal quality while minimizing distortion and interference. It is packaged in a Ball Grid Array (BGA) format, facilitating ease of integration into circuit designs with limited space.
The device is engineered to handle high power levels, providing robust performance in demanding environments. It incorporates advanced semiconductor technology for reliability and longevity in field operations. Manufacturers and designers favor this module for its balance of performance, size, and efficiency in modern RF communication systems.
Equivalent
Features
1. Frequency Range: Optimized for operation in the 2.3 to 2.7 GHz frequency range, making it suitable for LTE, Wi-Fi, and other wireless communication standards.
2. High Gain: Provides a high gain of approximately 14.3 dB to enhance weak signal reception, improving overall system performance.
3. Low Noise Figure: Exhibits a low noise figure of around 0.65 dB, essential for maintaining signal quality and minimizing interference in RF front-end applications.
4. High Linearity: Offers high linearity with an output third-order intercept point (OIP3) of about 35 dBm, crucial for reducing distortion in the presence of strong interfering signals.
5. Compact Package: Comes in a compact, leadless package, which is beneficial for space-constrained designs.
6. Low Power Consumption: Operates with a low current consumption, enhancing power efficiency in portable and battery-powered devices.
7. ESD Protection: Integrated electrostatic discharge (ESD) protection enhances reliability and robustness.
These features make the BGA735N16E6327XTSA1 ideal for improving signal quality in wireless communication devices.
Pinout
The primary function of this amplifier is to enhance weak RF signals while maintaining a low noise figure, which is crucial in applications like mobile communications, satellite communications, and wireless infrastructures. It helps improve the overall sensitivity and performance of the RF receiver systems by amplifying the incoming signal without significantly degrading the signal-to-noise ratio.
For detailed specifications such as electrical characteristics, pin configurations, and specific application circuits, referring to the official datasheet provided by Infineon Technologies is recommended. This will ensure accurate and comprehensive information tailored to specific use cases.
Manufacturer
Infineon's products serve various markets, including automotive, industrial power control, power management, and digital security. The company is known for its innovation in areas like energy efficiency, mobility, and security. Infineon's semiconductors are critical components in systems like electric vehicles, industrial automation, renewable energy technologies, and secure identification systems. As a global leader in semiconductor solutions, Infineon plays a significant role in advancing technological developments across multiple industries.