BLF6G10LS-200RN

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BLF6G10LS-200RN

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RF FET LDMOS 65V SOT539

  • FabricanteAmpleon USA Inc.

  • Peça do Fabricante #BLF6G10LS-200RN

  • Pacote SOT502B-3

  • Em Estoque3997

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Especificações

Atributo Valor
Package Tape & Reel (TR)
ProductStatus Last Time Buy
TransistorType LDMOS
Frequency 700MHz ~ 1GHz
Gain 20dB
Voltage-Test 28 V
CurrentRating(Amps) 4.2µA
Current-Test 1.4 A
Power-Output 200W
Voltage-Rated 65 V
Package/Case SOT-502B

Visão Geral

Description

The BLF6G10LS-200RN is a high-power RF LDMOS transistor designed by Ampleon for industrial, scientific, and medical (ISM) applications, as well as broadcast and RF energy. Key features include:
- Frequency Range: 1.8–200 MHz
- Output Power: Up to 200W (dependent on configuration)
- High Efficiency: Optimized for Class AB operation
- Robustness: Designed for high reliability in demanding environments
- Package: Air-cavity ceramic (SOT539A), ensuring thermal performance
Common applications include RF heating, plasma generation, and FM/AM broadcast amplifiers. It operates at 28V and offers excellent linearity and thermal stability.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the BLF6G10LS-200RN (NXP RF LDMOS transistor) include:
- MRF6P20010HSR6 (NXP)
- BLF6G10-10G (NXP)
- BLF6G22LS-200RN (higher power variant)
- PTVA101K02EV (Wolfspeed GaN alternative)
These offer similar RF performance for applications like base stations and broadcast amplifiers. Check datasheets for exact specs.

Features

The BLF6G10LS-200RN is a high-power RF LDMOS transistor designed for broadband applications. Key features:
- Frequency Range: 1800–2000 MHz
- Output Power: 200W (P3dB)
- Gain: 16 dB (typical)
- Efficiency: 45% (typical)
- Voltage: 32V (operating)
- Package: High-thermal-performance ceramic flange
- Applications: Industrial, scientific, and medical (ISM) RF amplifiers, broadcast, and base stations.
It offers excellent thermal stability and ruggedness, suitable for demanding RF environments.

Pinout

The BLF6G10LS-200RN is an LDMOS RF power transistor designed for base station applications.
- Pin Count: 4 (Flange, Gate, Drain, Source).
- Function:
- Gate (Input): Controls amplification.
- Drain (Output): Delivers high-power RF signal.
- Source & Flange: Ground/heat dissipation.
Key specs:
- Frequency: 1800–2000 MHz.
- Power: 10W (P1dB), 200W (pulsed).
- Voltage: 32V typical.
Used in 4G/LTE and other RF power amplifiers.

Application

The BLF6G10LS-200RN is a high-power RF LDMOS transistor designed for applications requiring robust performance in the 1.8–200 MHz range. Key application areas include:
- Industrial RF Heating & Plasma Generation – Used in induction heating and plasma systems.
- Broadcast Amplifiers – Suitable for FM, VHF, and shortwave transmitters.
- Amateur Radio (HAM) – High-efficiency RF amplification.
- Medical Equipment – RF energy delivery in electrosurgical devices.
- Military & Aerospace – Reliable RF power in communication systems.
Its high power (up to 300W), efficiency, and ruggedness make it ideal for demanding RF amplification tasks.

Package

The BLF6G10LS-200RN is a LDMOS RF power transistor from NXP Semiconductors. It comes in a SOT539A (HVQFN20) surface-mount package, designed for high-power RF applications like base stations. The package features a flanged, thermally enhanced design for efficient heat dissipation, ensuring reliable performance in demanding conditions. Compact and robust, it suits frequencies up to 200 MHz with high efficiency.

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