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BLF989E
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FabricanteAmpleon
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Peça do Fabricante #BLF989E
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Especificações
| Atributo | Valor |
| Brand | Ampleon |
| Subcategory | RF Transistors |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Mounting Type | SMD/SMT |
| Product Type | RF MOSFETs |
| Factory Pack Quantity | 20 |
| Technology | Si |
| Id - Continuous Drain Current | 2.8 uA |
| Vds - Drain - Source Breakdown Voltage | 50 V |
| Operating Frequency | 400 MHz to 860 MHz |
| Gain | 20 dB |
| Output Power | 1 kW |
| Transistor Type | LDMOS |
| Type | RF Power MOSFET |
| Vgs - Gate - Source Voltage | - 6 V, + 11 V |
| Rds On | 90 mOhms |
| Package / Case | SOT-539AN |
Visão Geral
Description
Key features include a maximum output power of 100W, a wide frequency range from 470 MHz to 860 MHz, and a robust design that ensures reliability under demanding conditions. The device is built using advanced transistor technology, offering low thermal resistance and high gain, which contribute to its effectiveness in high-power applications.
The BLF989E is often utilized in television broadcasting, professional audio applications, and other RF communication systems where efficient power amplification is critical. Its compact package and ease of integration make it a popular choice among engineers and designers looking to enhance performance in their RF designs.
Equivalent
Features
1. Power Output: Capable of delivering high output power, typically around 100W in its frequency range.
2. Frequency Range: Operates effectively from 470 MHz up to 1 GHz, suitable for TV transmitters and other communication systems.
3. High Efficiency: Offers excellent power efficiency, reducing heat dissipation and enhancing overall performance.
4. Ruggedness: Designed to withstand harsh operating conditions, making it reliable for demanding applications.
5. Integrated Design: Features a compact package, facilitating easy integration into existing systems.
6. Low Thermal Resistance: Ensures effective heat management, improving longevity and reliability.
7. Wide Dynamic Range: Accommodates various input signal levels, enhancing versatility in applications.
These attributes make the BLF989E a popular choice for professionals in the broadcasting and telecommunications sectors.
Pinout
### Pin Count and Functions:
1. Pin 1 (Gate): This pin controls the transistor's switching; it receives the input signal for amplification.
2. Pin 2 (Drain): This pin is connected to the high-voltage power supply and allows for the output of amplified RF signals.
3. Pin 3 (Source): This pin serves as the common reference point for the device, providing a return path for the current.
4. Pin 4 (Drain): This pin is additional and also connects to the drain for the device, further facilitating RF output.
The device is typically designed to operate at frequencies around 470 to 860 MHz and provides high efficiency and linearity in amplification.
Manufacturer
NXP is known for its innovation in wireless communication technologies, security solutions, and automotive electronics. The BLF989E specifically is a high-performance LDMOS (Lateral Diffusion Metal Oxide Semiconductor) transistor designed for use in RF amplification applications, particularly in the VHF and UHF frequency ranges. This makes it suitable for broadcasting, cellular base stations, and other communication systems.
With a strong focus on research and development, NXP plays a significant role in advancing semiconductor technology and meeting the evolving needs of various industries. The company has a global presence, with operations and customers around the world.
Application
1. VHF and UHF Transmitters: It's suitable for FM and digital modulation systems.
2. Telecommunication Systems: Utilized in base stations and repeaters for mobile communication.
3. Broadcasting: Employed in TV and radio transmission for high-efficiency signal amplification.
4. Industrial RF Heating: Used in applications like induction heating and dielectric heating.
5. Scientific Research: Applied in laboratory settings for RF signal generation and experimentation.
Its high power handling and efficiency make it ideal for various RF amplification needs in these domains.