Imagens apenas para referência
BSC052N03LS
+Lista de Materiais-
FabricanteTecnologias Infineon
-
Peça do Fabricante #BSC052N03LS
-
Em Estoque2578
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Factory Pack Quantity | 5000 |
| Subcategory | Transistors |
| Part # Aliases | BSC52N3LSXT SP000807602 BSC052N03LSATMA1 |
| Mounting Type | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Width | 5.15 mm |
| Unit Weight | 0.003683 oz |
| Package / Case | TDSON-8 |
| Configuration | Single |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 57 A |
| Rds On | 5.2 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 12 nC |
| Pd - Power Dissipation | 28 W |
| Channel Mode | Enhancement |
| Fall Time | 2.4 ns |
| Rise Time | 3.6 nS |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 13 nS |
| Typical Turn - On Delay Time | 2.4 ns |
| REACH - SVHC | Details |
| Forward Transconductance - Min | 38 S |
Visão Geral
Description
BSC052N03LS is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its low on-resistance and high efficiency, making it suitable for various electronic applications. Designed for power management, it operates at low voltages and offers fast switching capabilities, which are essential for devices such as power supplies, motor drivers, and DC-DC converters.
Key features of the BSC052N03LS include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating that facilitates robust performance in power applications. The low R_DS(on) value minimizes power loss during operation, enhancing thermal efficiency.
This MOSFET is commonly found in consumer electronics, automotive applications, and industrial systems, where reliable switching performance is critical. Overall, BSC052N03LS is an integral component for engineers seeking efficient solutions in modern electronic design.
Key features of the BSC052N03LS include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating that facilitates robust performance in power applications. The low R_DS(on) value minimizes power loss during operation, enhancing thermal efficiency.
This MOSFET is commonly found in consumer electronics, automotive applications, and industrial systems, where reliable switching performance is critical. Overall, BSC052N03LS is an integral component for engineers seeking efficient solutions in modern electronic design.
Equivalent
The BSC052N03LS is a N-channel MOSFET from Infineon. Equivalent products include:
1. IRF3205 (International Rectifier)
2. STP55NF06 (STMicroelectronics)
3. FQP30N06L (Fairchild Semiconductor)
4. AO3401 (Alpha & Omega Semiconductor)
Always verify specifications such as voltage, current, and R_DS(on) to ensure compatibility in your application.
1. IRF3205 (International Rectifier)
2. STP55NF06 (STMicroelectronics)
3. FQP30N06L (Fairchild Semiconductor)
4. AO3401 (Alpha & Omega Semiconductor)
Always verify specifications such as voltage, current, and R_DS(on) to ensure compatibility in your application.
Features
The BSC052N03LS is a high-performance N-channel MOSFET designed for various applications, including power management and switching circuits. Its key features include:
1. Low On-Resistance: The device offers a low R_DS(on), enhancing efficiency by minimizing power loss during operation.
2. High Voltage Rating: It typically supports a voltage rating of up to 30V, making it suitable for various applications that require reliable voltage handling.
3. Fast Switching Speed: The BSC052N03LS can switch quickly, contributing to improved performance in high-frequency applications.
4. Thermal Performance: It has good thermal characteristics, allowing it to operate effectively at elevated temperatures.
5. Small Package Size: The MOSFET is available in a compact package, facilitating space-saving designs in electronic circuits.
6. Gate Threshold Voltage: It features a low gate threshold voltage, ensuring compatibility with low-voltage drive circuits.
These features make the BSC052N03LS a versatile choice for engineers looking to optimize performance in power electronics applications.
1. Low On-Resistance: The device offers a low R_DS(on), enhancing efficiency by minimizing power loss during operation.
2. High Voltage Rating: It typically supports a voltage rating of up to 30V, making it suitable for various applications that require reliable voltage handling.
3. Fast Switching Speed: The BSC052N03LS can switch quickly, contributing to improved performance in high-frequency applications.
4. Thermal Performance: It has good thermal characteristics, allowing it to operate effectively at elevated temperatures.
5. Small Package Size: The MOSFET is available in a compact package, facilitating space-saving designs in electronic circuits.
6. Gate Threshold Voltage: It features a low gate threshold voltage, ensuring compatibility with low-voltage drive circuits.
These features make the BSC052N03LS a versatile choice for engineers looking to optimize performance in power electronics applications.
Pinout
The BSC052N03LS is an N-channel MOSFET produced by Infineon Technologies. It features a total of 5 pins, which are typically configured as follows:
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The terminal through which the current flows when the device is on.
3. Source (S) - The terminal connected to the ground or lower voltage side of the circuit.
The specific pinout may vary slightly based on the package type (e.g., TO-220, DPAK), so it is essential to refer to the official datasheet for precise details. In applications, the BSC052N03LS is commonly used in power management, motor control, and switching applications due to its low on-resistance and high efficiency.
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The terminal through which the current flows when the device is on.
3. Source (S) - The terminal connected to the ground or lower voltage side of the circuit.
The specific pinout may vary slightly based on the package type (e.g., TO-220, DPAK), so it is essential to refer to the official datasheet for precise details. In applications, the BSC052N03LS is commonly used in power management, motor control, and switching applications due to its low on-resistance and high efficiency.
Manufacturer
The BSC052N03LS is manufactured by Infineon Technologies AG, a leading semiconductor company based in Germany. Infineon specializes in providing innovative semiconductor solutions for various applications, including automotive, industrial, and security sectors. The company focuses on power semiconductors, microcontrollers, and sensors, aiming to drive efficiency and sustainability in electronic systems. Infineon is recognized for its contributions to the development of technologies that enable energy efficiency and enhance the performance of electronic devices.
Application
The BSC052N03LS is an N-channel MOSFET primarily used in power management applications. Its applications include automotive systems, power supplies, DC-DC converters, motor drives, and load switching. It is suitable for low-voltage and high-efficiency designs due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in battery management systems and renewable energy applications, such as solar inverters. Its versatility makes it ideal for both consumer electronics and industrial applications, ensuring efficient power handling and management.
Package
The BSC052N03LS is typically packaged in a TO-220 package type. This package is known for its robust thermal performance and is commonly used for power MOSFETs, providing effective heat dissipation during operation.
